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US 11,239,376 B2Granted
Diode structure
AssigneeSTMicroelectronics (Tours) SAS
InventorFrederic Lanois
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.
Claims20
A structure comprising:
- a substrate having a trench;
- a first conductive region in the trench and separated from the substrate by a first distance shorter than 10 nm;
- and
- a second conductive region in contact with the first conductive region the trench and extending deeper into the trench than the first conductive region.
1 more element
A diode comprising:
- a substrate having a first trench that has a sidewall and a bottom surface;
- a cathode and an anode coupled to the substrate;
- a first conductive region in the trench and separated from the sidewall of the substrate by a first distance that is less than approximately 10 nm;
- and
- a second conductive region in the trench in contact with the first conductive region and extending closer to the bottom surface than the first conductive region.
2 more elements
A method, comprising:
- forming a trench in a substrate;
- forming a conductive material in the trench including:
- forming a first conductive region in the trench that is separated from the substrate by a first distance that is less than 10 nm;
- and
- forming a second conductive region in the trench and extending farther into the trench than the first conductive region.
2 more elements
A diode comprising:
- a semiconductor substrate having a first trench;
- a cathode and an anode coupled to the substrate;
- a first vertical transistor in the substrate, the first vertical transistor including a first source region electrically coupled to the anode, a first gate extending vertically into the substrate and electrically coupled to the anode, a first drain region electrically coupled to the cathode, a first channel region between the first source and drain regions, and a first gate dielectric extending in the substrate and between the first gate and the first channel region,
- a first conductive region in the trench and separated from the substrate by a first distance shorter than 10 nm;
- and
- a second conductive region in contact with the first conductive region in the trench and extending deeper into the trench than the first conductive region.
3 more elements
Dependencies are inferred from the claim text.