US 11,239,373 B2 · Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a dielectric structure, a first source/drain electrode, a second source/drain electrode, an oxide semiconductor layer, a gate dielectric layer, and a first gate electrode. The first source/drain electrode is disposed in the dielectric structure. The oxide semiconductor layer is disposed on the first source/drain electrode in a vertical direction. The second source/drain electrode disposed on the oxide semiconductor layer in the vertical direction. The gate dielectric layer is disposed on the dielectric structure and surrounds the oxide semiconductor layer in a horizontal direction. The gate dielectric layer includes a first portion and a second portion. The first portion is elongated in the horizontal direction. The second portion is disposed on the first portion and elongated in the vertical direction. The first gate electrode is disposed on the first portion of the gate dielectric layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a dielectric structure;
a first source/drain electrode disposed in the dielectric structure;
an oxide semiconductor layer disposed on the first source/drain electrode in a vertical direction;
a second source/drain electrode disposed on the oxide semiconductor layer in the vertical direction;
a gate dielectric layer disposed on the dielectric structure and surrounding the oxide semiconductor layer in a horizontal direction, wherein the gate dielectric layer comprises:
a first portion elongated in the horizontal direction;
and
a second portion disposed on the first portion and elongated in the vertical direction;
and
a first gate electrode disposed on the first portion of the gate dielectric layer.

7 more elements

A manufacturing method of a semiconductor device, comprising:

forming a first source/drain electrode in a dielectric structure;
forming an oxide semiconductor layer on the first source/drain electrode in a vertical direction;
forming a gate dielectric layer on the dielectric structure, wherein the gate dielectric layer surrounds the oxide semiconductor layer in a horizontal direction, and the gate dielectric layer comprises:
a first portion elongated in the horizontal direction;
and
a second portion disposed on the first portion and elongated in the vertical direction;
forming a first gate electrode on the first portion of the gate dielectric layer;
and
forming a second source/drain electrode on the oxide semiconductor layer in the vertical direction.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims20