Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Sheng Chen, Chih Chieh Yeh, Cheng-Hsien Wu
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Abstract
A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on each of the first channel layers, a gate electrode layer disposed on the gate dielectric. Each of the first channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire passes through the first source/drain region and enters into an anchor region. At the anchor region, the semiconductor wire has no gate electrode layer and no gate dielectric, and is sandwiched by a second semiconductor material.
Claims20
A semiconductor device, comprising:
- an isolation insulating layer disposed over a substrate;
- a plurality of semiconductor wires vertically arranged over the substrate, each of the plurality of semiconductor wires including a channel region, a source/drain region and an end region, the source/drain region being disposed between the channel region and the end region;
- and
- a metal gate structure including a gate dielectric layer disposed around the first channel region of each of the semiconductor wires, and a gate electrode layer disposed on the gate dielectric layer,
- wherein an interface between a bottom of the metal gate structure and the isolation insulating layer is closer to the substrate than a uppermost part of the isolation insulating layer.
A semiconductor device, comprising:
- an isolation insulating layer disposed over a substrate;
- a plurality of semiconductor wires vertically arranged over the substrate, each of the plurality of semiconductor wires including a channel region, a source/drain region and an end region, the source/drain region being disposed between the channel region and the end region;
- and
- a metal gate structure including a gate dielectric layer wrapping around the first channel region of each of the semiconductor wires, and a gate electrode layer disposed on the gate dielectric layer,
- wherein a semiconductor layer made of a different material than the plurality of semiconductor wires is disposed between adjacent end regions of the plurality of semiconductor wires.
A semiconductor device, comprising:
- an isolation insulating layer disposed over a substrate;
- a fin structure protruding from the isolation insulating layer and having a channel region, a source/drain region and an end region, the source/drain region being disposed between the channel region and the end region;
- a gate dielectric layer disposed on the channel region;
- a gate electrode layer disposed on the gate dielectric layer;
- and
- a source/drain epitaxial layer disposed on the source/drain region of the fin structure,
- wherein no gate electrode layer, no gate dielectric layer and no source/drain epitaxial layer are disposed on the end region.
Dependencies are inferred from the claim text.