Structure and method for providing line end extensions for fin-type active regions

A semiconductor device, comprising:

• a first plurality of fins oriented in a first direction, wherein each of the first plurality of fins are parallel and spaced a first distance in a second direction from one another, the second direction being perpendicular the first direction, and wherein each of the first plurality of fins has a terminal end having a top surface terminating at a lateral side surface of the terminal end;
• a shallow trench isolation (STI) feature interfacing the lateral side surface of each of the first plurality of fins;
• and
• a gate disposed on the STI feature, wherein the gate extends in a second direction to overlap with and be directly disposed on the top surface of the terminal end of each of the first plurality of fins, wherein the gate includes spacers formed on sidewalls of a main gate.

A device comprising:

• a gate structure having a gate electrode and spacer elements abutting a sidewall of the gate electrode, wherein the gate structure is disposed over a semiconductor substrate;
• a first plurality of fin active regions extending from the semiconductor substrate and each having a first end defined by a top surface terminating at an interface with a lateral sidewall surface of the first end, wherein the top surface terminates directly under spacer elements of the gate structure, wherein the lateral sidewall surfaces directly interfaces the spacer elements;
• and
• a second plurality of fin active regions extending from the semiconductor substrate and each having a second end defined by a top surface terminating with an interface to a lateral sidewall surface of the second end, wherein the top surface terminates directly under spacer elements of the gate structure;
• wherein the first plurality of fin active regions extend laterally away from the gate structure on a first side of the gate structure;
• and
• wherein the second plurality of fin active regions extend laterally away from the gate structure on a second side of the gate structure that is opposite the first side of the gate structure.