Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• forming uneven portions in a region of the substrate in which an electrode is to be formed;
• forming a precursor film of a two-dimensional material on the substrate including the uneven portions;
• forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film;
• and
• forming the electrode on a part of the formed metal chalcogen film,
• wherein the forming of the two-dimensional material on the substrate on which the uneven portions are formed includes forming the two-dimensional material film in regions including one or more contact regions and a channel region, and
• wherein the forming of the metal chalcogenide film by performing the chalcogenation process of the formed precursor film includes:
• forming a two-dimensional material layer including crystalline planes oriented in a direction parallel to the substrate in the channel region;
• and
• forming two-dimensional material layers including crystalline planes oriented in a direction perpendicular to the substrate in valley portions of the contact regions.