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US 11,239,348 B2Granted
Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits
OwnerMatthew H. Kiminventor
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Abstract
Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.
Claims16
A heterojunction bipolar transistor comprising:
- an N-type InGaP emitter;
- a P-type GaAs base;
- an N-type GaN collector;
- an emitter-base junction between the N-type InGaP emitter and the P-type GaAs base, and comprising a first conduction band offset and
- a base-collector junction between the P-type GaAs base and the N-type GaN collector, and comprising a second conduction band offset,
- wherein:
- a growth condition of the N-type InGaP emitter comprises one of:
- ordered, disordered, or mixed;
- the P-type GaAs base is wafer bonded to the N-type GaN collector;
- the base-collector junction comprises a diode I-V characteristic;
- the first conduction band offset is less than 0.1 eV and adjustable based on the growth condition of the N-type InGaP emitter;
- and
- the second conduction band offset is less than 0.1 eV.
10 more elements
A method of manufacturing a heterojunction bipolar transistor, the method comprising:
- forming an N-type InGaP emitter;
- forming a P-type GaAs base;
- forming an N-type GaN collector;
- forming an emitter-base junction between the N-type InGaP emitter and the P-type GaAs base, wherein the emitter-base junction comprises a first conduction band offset and
- forming a base-collector junction between the P-type GaAs base and the N-type GaN collector, wherein the base-collector junction comprises a second conduction band offset,
- wherein:
- a growth condition of the N-type InGaP emitter comprises one of:
- ordered, disordered, or mixed;
- the P-type GaAs base is wafer bonded to the N-type GaN collector;
- the base-collector junction comprises a diode I-V characteristic;
- the first conduction band offset is less than 0.1 eV and adjustable based on the growth condition of the N-type InGaP emitter;
- and
- the second conduction band offset is less than 0.1 eV.
10 more elements
Dependencies are inferred from the claim text.