Method for making a transistor of which the active region includes a semimetal material

A method for making at least one transistor, comprising at least implementation of the following steps:

• making, on a substrate, at least one gate surrounded laterally by at least one dielectric insulating material;
• depositing at least one etching stop layer on said at least one gate and said at least one dielectric insulating material;
• etching said at least one etching stop layer in accordance with at least one pattern of an active region of the at least one transistor, forming at least one portion of a channel location located on a portion of said at least one gate;
• etching said at least one dielectric insulating material located in said at least one pattern of the active region, forming locations of source and drain regions and exposing a side surface of said at least one gate;
• making at least one semimetal material in the channel location and in the locations of the source and drain regions;
• planarizing said at least one semimetal material with stopping on said at least one etching stop layer;
• and
• crystallizing said at least one semimetal material, forming the channel and the source and drain regions of the at least one transistor;
• wherein the channel includes dimensions such that said at least one semimetal material of the channel has electrical characteristics of a semiconductor material, and the source and drain regions include dimensions such that said at least one semimetal material of the source and drain regions has electrical characteristics of an electrically conductive material.