US 11,239,344 B2 · Semiconductor devices and methods of manufacturing the same

Abstract

A method of manufacturing a semiconductor device, the method including: forming, in a first region of a substrate, an active fin and a sacrificial gate structure intersecting the active fin; forming a first spacer and a second spacer on the substrate to cover the sacrificial gate structure; forming a mask in a second region of the substrate to expose the first region of the substrate; removing the second spacer from the first spacer in the first region of the substrate by using the mask; forming recesses at opposite sides of the sacrificial gate structure by removing portions of the active fin; forming a source and a drain in the recesses; and forming an etch-stop layer to cover both sidewalls of the sacrificial gate structure and a top surfaces of the source and drain.

Claims20

Dependent claims

A method of manufacturing a semiconductor device, the method comprising:

forming, in a first region of a substrate, an active fin and a sacrificial gate structure intersecting the active fin;
forming a first spacer and a second spacer on the substrate to cover the sacrificial gate structure;
forming a mask in a second region of the substrate to expose the first region of the substrate;
removing the second spacer from the first spacer in the first region of the substrate by using the mask;
forming recesses at opposite sides of the sacrificial gate structure by removing portions of the active fin;
forming a source and a drain in the recesses;
forming a third spacer on the sacrificial gate structure, the first spacer, and the source and the drain;
forming an etch-stop layer to cover both sidewalls of the sacrificial gate structure and top surfaces of the source and drain, wherein the etch stop layer is formed directly on the source and drain after a removal of the third spacer from the sacrificial gate structure, the first spacer, the source, and the drain.

5 more elements

A method of manufacturing a semiconductor device, the method comprising:

forming, in a first region of a substrate, a first active fin and a first sacrificial gate structure intersecting the first active fin, and forming, in a second region of the substrate, a second active fin and a second sacrificial gate structure intersecting the second active fin;
forming a first spacer and a second spacer in the first and second regions of the substrate to cover sidewalls of the first and second sacrificial gate structures, wherein the second spacer is formed on the first spacer before any portions of the first spacer are removed;
forming a first mask in the second region of the substrate to expose the first region of the substrate;
removing the second spacer from the first spacer in the first region of the substrate;
forming first recesses at opposite sides of the first sacrificial gate structure by removing portions of the first active fin;
removing the first mask from the second region of the substrate;
forming a first source and a first drain in the first recesses;
and
removing the second spacer from the first spacer in the second region of the substrate after forming the first source and the first drain in the first recesses in the first region.

6 more elements

A method of manufacturing a semiconductor device, the method comprising:

forming, in a first region of a substrate, a first active fin and a first sacrificial gate structure intersecting the first active fin, and forming, in a second region of the substrate, a second active fin and a second sacrificial gate structure intersecting the second active fin;
forming a first spacer and a second spacer in the first and second regions of the substrate to cover sidewalls of the first and second sacrificial gate structures;
forming a first mask in the second region of the substrate to expose the first region of the substrate;
removing the second spacer from the first spacer in the first region of the substrate;
forming first recesses at opposite sides of the first sacrificial gate structure by removing portions of the first active fin;
removing the first mask from the second region of the substrate;
and
forming a first source and a first drain in the first recesses, wherein the forming of the first mask comprises forming the first mask in the first and second regions of the substrate and removing a mask portion of the first mask disposed in the first region,
the removing of the mask portion disposed in the first region comprises removing the second spacer in the first region of the substrate, and
the removing of the first mask comprises removing the second spacer from the first spacer in the second region.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor devices and methods of manufacturing the same

Life of this patent

Semiconductor devices and methods of manufacturing the same

Life of this patent

Abstract

Claims20