Semiconductor device and method of manufacturing same
AssigneeRenesas Electronics Corporation
InventorTetsuya Yoshida
Life of this patent
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Abstract
To provide a semiconductor device having improved reliability. The semiconductor device has, on a SOI substrate thereof having a semiconductor substrate, an insulating layer, and a semiconductor layer, a gate insulating film having an insulating film and a high dielectric constant film. The high dielectric constant film has a higher dielectric constant than a silicon oxide film and includes a first metal and a second metal. In the high dielectric constant film, the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.
Claims10
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) providing a semiconductor substrate, an insulating layer formed on the semiconductor substrate, and a semiconductor layer formed on the insulating layer;
- (b) forming a first insulating film on the semiconductor layer;
- (c) depositing a metal film on the first insulating film by sputtering;
- and
- (d) reacting the metal film and the first insulating film by performing a heat treatment on the metal film,
- wherein the metal film contains a first metal and a second metal different from the first metal, and
- wherein the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.
A method of manufacturing a semiconductor device having a first region in which a first MISFET having a first conductivity type is to be formed and a second region in which a second MISFET having a second conductivity type opposite to the first conductivity type is to be formed, comprising the steps of:
- (a) providing a semiconductor substrate, an insulating layer formed on the semiconductor substrate, and a semiconductor layer formed on the insulating layer;
- (b) forming a first insulating film on the semiconductor layer in the first region and the second region;
- (c) after the step (b), forming a first mask pattern that exposes the first region and covers the second region;
- (d) after the step (c), depositing a first metal film on the first insulating film by sputtering, while having the first mask pattern;
- (e) after the step (b), forming a second mask pattern that exposes the second region and covers the first region;
- (f) after the step (e), depositing a second metal on the first insulating film by sputtering while having the second mask pattern;
- (g) after the steps (c) to (f), by performing a heat treatment on the first metal film and the second metal film, reacting the first metal film and the first insulating film in the first region, and reacting the second metal film and the first insulating film in the second region.
Dependencies are inferred from the claim text.