Bipolar junction transistor with gate over terminals
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Shuan Li, Zi-Ang Su, Ying-Keung Leung
Life of this patent
Estimating the term…
Abstract
Embodiments include a first set of fins having an emitter of a bipolar junction transistor (BJT) disposed over the first set of fins, a second set of fins having a base of the BJT disposed over the second set of fins, and a third set of fins having a collector of the BJT disposed over the third set of fins. A first gate structure is disposed over the first set of fins adjacent to the emitter. A second gate structure is disposed over the second set of fins adjacent to the base. A third gate structure is disposed over the third set of fins adjacent to the collector. The first gate structure, second gate structure, and third gate structure are physically and electrically separated.
Claims20
A device comprising:
- a first set of fins having a first base region doped with a p-type dopant, an emitter of a bipolar junction transistor (BJT) disposed over the first set of fins, the emitter of the BJT being a shared emitter of a second BJT;
- a second set of fins having a second base region doped with an n-type dopant, the second base region contacting the first base region, a base of the BJT disposed over the second set of fins;
- a third set of fins having a third base region doped with a p-type dopant, a collector of the BJT disposed over the third set of fins;
- a first gate structure disposed over the first set of fins adjacent to the emitter;
- a second gate structure disposed over the second set of fins adjacent to the base;
- and
- a third gate structure disposed over the third set of fins adjacent to the collector, wherein the first gate structure, second gate structure, and third gate structure are physically and electrically separated.
A device comprising:
- a first fin, a second fin, and a third fin protruding from a substrate, the first fin and the third fin having a first conductivity, the second fin having a second conductivity opposite to the first conductivity, the first fin, the second fin, and the third fin being parallel to each other;
- a gate structure disposed over and along sidewalls of the first fin, the second fin, and the third fin;
- an emitter of a bipolar junction transistor (BJT) disposed on opposing sides of the gate structure over the first fin, wherein the emitter of the BJT is common to an emitter of a second BJT;
- a base of the BJT disposed on opposing sides of the gate structure over the second fin;
- a collector of the BJT disposed on opposing sides of the gate structure over the third fin;
- and
- an insulating material completely encircling a first portion of the gate structure disposed over the first fin, a second portion of the gate structure disposed over the second fin, and a third portion of the gate structure disposed over the third fin.
A device comprising:
- a plurality of fins, the plurality of fins comprising first fins, second fins, third fins, fourth fins, and fifth fins, the plurality of fins having a first lengthwise direction;
- a gate structure over and along sidewalls of the plurality of fins, the gate structure having a second lengthwise direction perpendicular to the first lengthwise direction, the gate structure comprising a first gate over the first fins, a second gate over the second fins, a third gate over the third fins, a fourth gate over the fourth fins, and a fifth gate over the fifth fins, each of the first gate, second gate, third gate, fourth gate, and fifth gate physically separated from each other;
- a first epitaxy over the first fins on opposing sides of the first gate, a second epitaxy over the second fins on opposing sides of the second gate, a third epitaxy over the third fins on opposing sides of the third gate, a fourth epitaxy over the fourth fins on opposing sides of the fourth gate, a fifth epitaxy over the fifth fins on opposing sides of the fifth gate, the first epitaxy corresponding to a base of a first bipolar junction transistor (BJT), the second epitaxy corresponding to a collector of the first BJT, the third epitaxy corresponding to a base of a second BJT, the fourth epitaxy corresponding to a collector of the second BJT, the fifth epitaxy corresponding to an emitter of the first BJT and the second BJT.
Dependencies are inferred from the claim text.