Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsShinya Soneda, Tetsuya Nitta, Kenji Harada
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Abstract
According to an aspect of the present disclosure, a semiconductor device includes a semiconductor substrate, a lower electrode provided on the semiconductor substrate, an insulating film that is provided on the semiconductor substrate and surrounds the lower electrode and a metal film that is provided on the lower electrode and includes a convex portion on an upper surface thereof, wherein the convex portion includes a first portion extending in a first direction parallel to an upper surface of the semiconductor substrate, and a second portion extending in a second direction that is parallel to the upper surface of the semiconductor substrate and intersects the first direction, and the metal film is thinner than the insulating film.
Claims23
A semiconductor device comprising:
- a semiconductor substrate;
- a lower electrode provided on the semiconductor substrate;
- an insulating film that is provided on the semiconductor substrate and surrounds the lower electrode;
- and
- a metal film formed of Ni—P that is provided on the lower electrode and includes a convex portion on an upper surface thereof, wherein
- the convex portion includes a first portion extending in a first direction parallel to an upper surface of the semiconductor substrate, and a second portion extending in a second direction that is parallel to the upper surface of the semiconductor substrate and intersects the first direction,
- the metal film is thinner than the insulating film, and
- the convex portion does not overlap with the insulating film in a plan view.
A semiconductor device comprising:
- a semiconductor substrate;
- a lower electrode provided on the semiconductor substrate;
- an insulating film that is provided on the semiconductor substrate, surrounds the lower electrode and forms an outer edge of a chip;
- and
- a metal film formed of Ni—P that is provided on the lower electrode and includes a convex portion on an upper surface thereof, wherein
- the convex portion includes a first portion extending in a first direction parallel to an upper surface of the semiconductor substrate at an outer peripheral portion of the chip, and a second portion extending in a second direction that is parallel to the upper surface of the semiconductor substrate and intersects the first direction at an outer peripheral portion of the chip, and
- the convex portion does not overlap with the insulating film in a plan view.
A semiconductor device comprising:
- a semiconductor substrate;
- a lower electrode provided on the semiconductor substrate;
- an insulating film that is provided on the semiconductor substrate and surrounds the lower electrode;
- and
- a metal film formed of Ni—P that is provided on the lower electrode and includes a cross-shaped convex portion on an upper surface thereof, wherein
- the convex portion does not overlap with the insulating film in a plan view.
Dependencies are inferred from the claim text.