Electrode structure for field effect transistor

A Field Effect Transistor (FET) structure, comprising:

• a semiconductor;
• a first dielectric structure disposed over the semiconductor;
• a second dielectric structure having a first layer, a second layer and a third layer disposed on the first dielectric structure;
• a source electrode and a drain electrode each having an upper electrical interconnect portion and a lower Ohmic contact portion in Ohmic contact with the semiconductor, the lower Ohmic contact portion passing vertically through the first dielectric structure to the semiconductor, the upper electrical interconnect portion passing vertically into the second dielectric structure to the lower Ohmic contact portion;
• a gate electrode for controlling a flow of carriers in the semiconductor between the source electrode and the drain electrode, the gate electrode having an upper electrical interconnect portion and a lower portion in contact with the semiconductor, the upper electrical interconnect portion of the gate electrode passing vertically into the second dielectric structure to the lower portion of the gate electrode;
• wherein a portion of the second dielectric structure extends horizontally between the gate electrode and the drain electrode;
• and
• a field plate parallel to the upper electrical interconnect portion of the source electrode and the upper electrical interconnect portion of the drain electrode, and the upper electrical interconnect portion of the gate electrode, the field plate being disposed between the upper electrical interconnect portion of the drain electrode and the upper electrical interconnect portion of the gate electrode, the field plate having an upper, electrical interconnect portion electrically connected to the upper electrical interconnect portion of the source electrode, the upper electrical interconnect portion of the field plate passing vertically from the upper surface of the FET structure into the second dielectric structure and terminating at a lower portion of the field plate, the lower portion of the field plate being disposed a predetermined, finite distance from the semiconductor at the first dielectric structure.