Semiconductor device and semiconductor device manufacturing method

A semiconductor device comprising:

• a semiconductor substrate having a dopant of a first conductivity type;
• a high concentration region having a doping concentration that is higher than a concentration of the dopant in the semiconductor substrate and having a hydrogen concentration distribution in a depth direction of the semiconductor substrate with a peak at a first position;
• and
• a first crystalline defect region provided closer to one main surface of the semiconductor substrate than the high concentration region and having a crystalline defect density with a highest center peak at a second position closer to the one main surface than the first position, wherein
• the hydrogen concentration distribution in the depth direction of the semiconductor substrate includes:
• a first tail, provided closer to the one main surface than the first position, where the hydrogen concentration decreases from the first position toward the one main surface;
• and
• a second tail, provided closer to another main surface of the semiconductor substrate than the first position, where the hydrogen concentration decreases with a steeper slope than the first tail from the first position toward the other main surface, and
• a distribution of the doping concentration in the depth direction has a first donor peak with a concentration lower than the hydrogen concentration at the first position.