P-type oxide semiconductor and semiconductor device having pyrochlore structure

Abstract

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn4+/(Sn2++Sn4+) which is a ratio of Sn4+ to a total amount of Sn in the composite oxide is 0.124≤Sn4+/(Sn2++Sn4+)≤0.148.

Dependencies are inferred from the claim text.