GaN lateral vertical HJFET with source-P block contact
AssigneeGangfeng Ye
InventorGangfeng Ye
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Abstract
A vertical JFET is provided. The JFET is mixed with lateral channel structure and p-GaN gate structure. The JFET has an improved barrier layer for p-GaN block layer and enhanced Ohmic contact with source. In one embodiment, regrowth of lateral channel is provided so that counter doping surface Mg will be buried. In another embodiment, a dielectric layer is provided to protect p-type block layer during the processing, and later make Ohmic source and p-type block layer. Method of a barrier regrown layer for enhanced lateral channel performance is provided where a regrown barrier layer is deposited over the drift layer. The barrier regrown layer is an anti-p-doping layer. Method of a patterned regrowth for enhanced Ohmic contact is provided where a patterned masked is used for the regrowth.
Claims13
A method, comprising:
- as-growing epitaxial layers on top of a N+ gallium nitride (GaN) substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer;
- re-growing a first N-type regrown layer over the P-type block layer, wherein the first N-type regrown layer encapsulates the P-type block layer and surface dopant;
- etching trenches through the first N-type regrown layer and the P-type block layer;
- and
- re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AlGaN/GaN 2D Gas channel.
A method, comprising:
- as-growing epitaxial layers on top of a N+ GaN substrate, wherein an N-type GaN drift layer is grown over the N+ substrate layer, and a P-type block layer is grown over the N-type GaN drift layer;
- and
- re-growing one or more regrown layers over the P-type block layer with a patterned regrown by re-growing a first N-type regrown layer encapsulating the P-type block layer and surface dopant, etching trench through the first N-type regrown layer and the P-type block layer, and re-growing a second regrown layer over the first N-type regrown layer and in the trench to form an N-type channel and an AlGaN/GaN 2D Gas channel.
Dependencies are inferred from the claim text.