High-voltage drain expended MOS transistor
AssigneeTexas Instruments Incorporated
InventorsSunglyong Kim, Seetharaman Sridhar, Sameer Pendharkar
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Abstract
A semiconductor device includes a MOS transistor located within a semiconductor substrate of a first conductivity type. The transistor includes a body well located between a drain well and a substrate contact well. A buried voltage blocking region of a second conductivity type is located within the substrate and is connected to the body well. The buried voltage blocking region extends toward the substrate contact well, with an unmodified portion of the substrate remaining between the voltage blocking region and the substrate contact well.
Claims27
A semiconductor device, comprising:
- a MOS transistor formed within a semiconductor substrate of a first conductivity type and having a surface drift layer of the first conductivity type located between a body well and a drain well;
- a buried voltage blocking region of a second conductivity type connected to the body well and extending from the body well toward a substrate contact well;
- and
- an unmodified portion of the substrate located between the buried voltage blocking region and the substrate contact well.
A high-voltage MOS transistor, comprising:
- a p-type substrate;
- first and second p-wells located within the substrate;
- an n-well located within the substrate between the first and second p-wells;
- a p-type surface drift region located between and connected to the n-well and the second p-well;
- a gate located over the n-well;
- and
- a buried n-type region that partially overlaps the n-well and extends from the n-well toward the first p-well, wherein
- the first p-well and the buried n-type region are spaced apart laterally.
An electronic device, comprising:
- a drain well of a drain-extended (DE)-MOS transistor located within a semiconductor substrate including an epitaxial layer of a first conductivity type, the semiconductor substrate and drain well having the first conductivity type;
- a body well located within the semiconductor substrate, the body well having a different second conductivity type;
- a junction termination diode located within the semiconductor substrate, the junction termination diode having first and second terminals, the first terminal connected to the semiconductor substrate at a substrate contact well having the first conductivity type, and the second terminal connected to the body well;
- and
- a buried region of the second conductivity type extending from the body well toward the substrate contact well,
- wherein an epitaxial layer portion is located between the buried region and the substrate contact well, the epitaxial layer portion having a lower dopant concentration than the substrate contact well.
An integrated circuit (IC), comprising:
- an n-type body well and a p-type drain well of a drain-extended (DE)-MOS transistor located within a p-type semiconductor substrate including a p-type epitaxial layer;
- and
- a junction termination diode having first and second terminals located within the semiconductor substrate, the first terminal connected to the p-type semiconductor substrate at a p-type substrate contact well, and the second terminal connected to the n-type body well;
- and
- an n-type buried region located within the p-type epitaxial layer and extending from the n-type body well toward the substrate contact well,
- wherein an epitaxial layer portion is located between the n-type buried region and the substrate contact well, the epitaxial layer portion having a lower dopant concentration than the substrate contact well.
Dependencies are inferred from the claim text.