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US 11,239,316 B2Granted
Semiconductor device and method of forming the semiconductor device
AssigneeInternational Business Machines Corporation
InventorsMarc Adam Bergendahl, Gauri Karve, Fee Li Lie, Eric R. Miller, Robert Russell Robison, John Ryan Sporre, Sean Teehan
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Abstract
A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
Claims20
A semiconductor device comprising:
- a fin structure comprising a cylindrical shape;
- an inner gate formed inside the fin structure;
- and
- an outer gate formed outside the fin structure and electrically connected to the inner gate.
1 more element
A method of forming a semiconductor device, the method comprising:
- forming a fin structure;
- forming an inner gate inside the fin structure;
- and
- forming an outer gate outside the fin structure, the outer gate being connected to the inner gate.
1 more element
A semiconductor device comprising:
- a fin structure including a recess;
- an inner gate formed inside the fin structure;
- an outer gate formed outside the fin structure and connected to the inner gate;
- and
- a conductor formed in the recess and connecting the inner and outer gates.
2 more elements
Dependencies are inferred from the claim text.