Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate;
• a source region and a drain region that are formed on an upper surface of the semiconductor substrate and are adjacent to each other in a first direction;
• an element separation insulating film that is formed on the semiconductor substrate and exposes a portion of a first region which is the upper surface of the semiconductor substrate between both the source region and the drain region;
• a gate electrode that is formed on a region over the first region, a portion of the drain region and a portion of the source region;
• a gate insulating film thinner than the element separation insulating film and the gate electrode;
• a gate leading-out interconnection that is integrally connected to the gate electrode and is formed on the element separation insulating film;
• and
• a well that is formed on an upper surface of the semiconductor substrate,
• wherein a portion of the element separation insulating film abuts the well,
• wherein the gate electrode, the source region, and the drain region constitute a field effect transistor,
• wherein the gate leading-out interconnection is separated from one of the source region and the drain region in plan view,
• wherein a first side, a second side and a third side of the source region is surrounded by the well in plan view, and a first side, a second side and a third side of the drain region is surrounded by the well in plan view,
• wherein a fourth side of the source region is electrically connected to a drain electrode and a fourth side of the drain region is electrically connected to a source electrode, and
• wherein the fourth side of the source region is electrically connected to the drain electrode via a plug and the fourth side of the drain region is electrically connected to the source electrode via a second plug.