Semiconductor chip integrating high and low voltage devices
AssigneeAlpha and Omega Semiconductor Incorporated
InventorHideaki Tsuchiko
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Abstract
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS transistor and the like. the first doped well being configured as a base of the DMOS transistor, a P channel DMOS transistor and the like. These and other embodiments are described in further detail below.
Claims3
A semiconductor chip comprising a first device disposed thereon, said semiconductor chip further comprising:
- a substrate layer of a first conductivity type;
- a first epitaxial layer of the first conductivity type on top of the substrate layer;
- a second epitaxial layer of a second conductivity opposite to the first conductivity type on top of the first epitaxial layer;
- a deep buried implant region of the second conductivity type in an area for the first device;
- a first doped well of the first conductivity type extending downwards from a top surface of the second epitaxial layer above the deep buried implant region;
- wherein the deep buried implant region of the second conductivity type further comprising a deep buried highly doped region of the second conductivity type and a deep buried lightly doped region of the second conductivity type surrounding the deep buried highly doped region and extending from a depth of the substrate to a top surface of the first epitaxial layer, wherein the first device includes a bipolar transistor.
Dependencies are inferred from the claim text.