Array substrate with capacitor including conductive part of active layer and method of fabricating thereof

A method of fabricating an array substrate, comprising:

• forming a plurality of first thin film transistors, a plurality of second thin film transistors, and a plurality of capacitor electrodes on a base substrate;
• and
• wherein forming a respective first thin film transistor of the plurality of first thin film transistors comprises forming a first active layer, forming a first gate electrode, forming a first source electrode, and forming a first drain electrode;
• forming a respective second thin film transistor of the plurality of second thin film transistors comprises forming a second active layer, forming a second gate electrode, forming a second source electrode, and forming a second drain electrode;
• forming the first active layer comprises forming a first semi-conductive channel part, forming a first conductive part electrically connected to the first drain electrode, and forming a second conductive part electrically connected to the first source electrode;
• forming the second active layer comprises forming a second semi-conductive channel part, forming a third conductive part electrically connected to the second source electrode, and forming a fourth conductive part electrically connected to the second drain electrode;
• the method further comprising forming an insulating layer and forming an inter-layer dielectric layer, the insulating layer being formed between a respective capacitor electrode of the plurality of capacitor electrodes and first active layer, and the inter-layer dielectric layer being formed between the respective capacitor electrode and the first drain electrode;
• forming a first via and a second via respectively extending through the inter-layer dielectric layer;
• the second drain electrode is formed to be connected to the respective capacitor electrode of the plurality of capacitor electrodes through the first via, the second drain electrode is connected to the first gate electrode through the second via, and the respective capacitor electrode is insulated from the first active layer by the insulating layer;
• the respective capacitor electrode, the insulating layer, and the first conductive part are configured to form a first storage capacitor;
• the respective capacitor electrode, the first drain electrode, and the inter-layer dielectric layer are configured to form a second storage capacitor.