Bottom conductive structure with a limited top contact area
AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Baozhen Li, Theodorus E. Standaert, Koichi Motoyama
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Abstract
A dielectric spacer is formed laterally adjacent to a bottom conductive structure. The dielectric spacer is configured to limit the area in which a subsequently formed top contact structure can contact the bottom conductive structure. In some embodiments, only a topmost surface of the bottom conductive structure is contacted by the top contact structure. In other embodiments, a topmost surface and an upper sidewall surface of the bottom conductive structure is contacted by the top contact structure.
Claims20
A structure comprising:
- a dielectric spacer located laterally adjacent to, and contacting, a sidewall of a bottom conductive structure;
- a layer of dielectric material located laterally adjacent to, and above, the dielectric spacer;
- and
- a top contact structure located on at least a topmost surface of the bottom conductive structure and a surface of the dielectric spacer, wherein the top contact structure is embedded in the layer of dielectric material.
A method of forming a semiconductor structure, the method comprising:
- forming a dielectric spacer located laterally adjacent to, and contacting, a sidewall of a bottom conductive structure;
- forming a layer of dielectric material laterally adjacent to, and above, the dielectric spacer, wherein the layer of dielectric material is also present above the bottom conductive structure;
- forming a contact opening in the layer of dielectric material;
- and
- forming a top contact structure in the contact opening formed in the layer of dielectric material, wherein the top contact structure contacts at least a topmost surface of the bottom conductive structure and a surface of the dielectric spacer.
Dependencies are inferred from the claim text.