Image sensor for high photoelectric conversion efficiency and low dark current
AssigneeSamsung Electronics Co., Ltd.
InventorsSanghyun Jo, Jaeho Lee, Eunkyu Lee, Seongjun Park, Kiyoung Lee, Jinseong Heo
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Abstract
Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.
Claims11
An image sensor comprising:
- first and second electrodes spaced apart from each other;
- a plurality of photodetection layers between the first and second electrodes and configured to convert incident light into an electrical signal, one or more of the plurality of photodetection layers including a semiconductor material;
- and
- an interlayer continuously between at least two of the plurality of photodetection layers and including a metallic or semi-metallic material having anisotropy in electrical conductivity, the interlayer being substantially one material and a solid layer, and comprising WTe2.
An image sensor comprising:
- first and second electrodes separated by a plurality of photodetection layers, one or more of the plurality of photodetection layers including a semiconductor material;
- and
- an interlayer continuously between at least two of the plurality of photodetection layers, the interlayer having anisotropy in electrical conductivity, the interlayer being one material and a solid layer, and comprising WTe2.
Dependencies are inferred from the claim text.