Photoelectric conversion apparatus having metal portion, imaging system, movable body, and semiconductor chip for stacking

A photoelectric conversion apparatus comprising:

• a semiconductor substrate having a first plane and a second plane, the second plane being entered by light;
• a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and an isolation region between the first and third photoelectric conversion elements, wherein the first and second photoelectric conversion elements are arranged along a first direction, the first and third photoelectric conversion elements are arranged along a second direction, and the first and second directions are parallel to the first plane;
• a gate electrode arranged on a first plane side of the semiconductor substrate, and configured to transfer a charge of the first photoelectric conversion element;
• a contact plug arranged on the first plane side of the semiconductor substrate, and connected to the gate electrode;
• and
• a first metal portion provided between the first plane and a third plane, and extending from at least a part of the first photoelectric conversion element to at least a part of the second photoelectric conversion element through a floating diffusion region in a planar view, wherein the third plane includes a plane of the contact plug opposite to a plane connected to the gate electrode,
• wherein the first metal portion has an opening superimposed on at least a part of the isolation region in a planar view, and
• wherein the first metal portion has a first portion and a second portion, the first portion being located between the first plane and a fourth plane including a surface of the gate electrode on a third plane side, the first portion being located over the first photoelectric conversion element, the second portion being located between the fourth plane and third plane, and the second portion being located over the gate electrode.

A semiconductor chip for stacking comprising:

• a semiconductor substrate having a first plane and a second plane, wherein the second plane is entered by light;
• a first photoelectric conversion element and a second photoelectric conversion element, the first and second photoelectric conversion elements being arranged along a first direction, and the first direction being parallel to the first plane;
• a floating diffusion region arranged on a first plane side of the semiconductor substrate, arranged between the first and second photoelectric conversion elements, and configured to hold a charge generated by at least the first photoelectric conversion element;
• an amplifying transistor arranged on the first plane side of the semiconductor substrate, and including a first gate electrode;
• a first contact plug arranged on the first plane side of the semiconductor substrate, and connected to the floating diffusion region;
• a second contact plug arranged on the first plane side of the semiconductor substrate, and connected to the first gate electrode;
• a wire arranged on the first plane side of the semiconductor substrate, having a first part connected to the first contact plug, a second part connected to the second contact plug, and a third part between the first part and the second part, and configured to electrically connect the first gate electrode and the floating diffusion region to each other;
• a first metal portion arranged between the first plane and a third plane, extending from at least a part of the first photoelectric conversion element to at least a part of the second photoelectric conversion element through the floating diffusion region in a planar view, having an opening over which at least a part of the third part of the wire is superimposed in a planar view, and having a first portion and a second portion, the first portion being located between the first plane and a fourth plane including a surface of the first gate electrode on a third plane side, the first portion being located over the first photoelectric conversion element, the second portion being located between the fourth plane and the third plane, and the second portion being located over the first gate electrode, wherein the third plane includes a plane of the first contact plug on which the first contact plug is connected to the wire;
• and
• a connector configured to output a signal based on at least the first photoelectric conversion element to another semiconductor chip.