Imaging device and method for manufacturing the same

An imaging device comprising a plurality of light-receiving elements arranged in a two-dimensional matrix shape, wherein

• each of the light-receiving elements includes a first electrode, a photoelectric conversion layer, and a second electrode,
• the photoelectric conversion layer has a laminated structure in which a first compound semiconductor layer having a first conductivity type and a second compound semiconductor layer having a second conductivity type that is a reverse conductivity type to the first conductivity type are laminated from a side of the first electrode,
• the second compound semiconductor layer has been removed in a region between the light-receiving elements,
• the first electrode and the first compound semiconductor layer are shared by the light-receiving elements,
• an impurity concentration of the first compound semiconductor layer near the first electrode is lower than that of the first compound semiconductor layer near the second compound semiconductor layer,
• in the light-receiving elements, a surface recombination preventing layer is formed between the first electrode and the first compound semiconductor layer, and
• the surface recombination preventing layer has a thickness of 30 nm or less.