Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsKook-tae Kim, Jin-gyun Kim, Soo-jin Hong
Life of this patent
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Abstract
An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.
Claims18
An image sensor, comprising:
- a semiconductor substrate having a first surface and a second surface;
- and
- a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate,
- wherein the pixel isolation film includes:
- a buried layer including polysilicon containing a fining element;
- and
- an insulating liner between the buried layer and the semiconductor substrate, the insulating liner continuously extending from the first surface of the semiconductor substrate to the second surface of the semiconductor substrate,
- wherein the fining element consists of oxygen, carbon, or fluorine,
- wherein, when the fining element consists of oxygen, a concentration of oxygen in the buried layer is 6 at % to 40 at %,
- wherein, when the fining element consists of carbon, a concentration of carbon in the buried layer is 6 at % to 20 at %, and
- wherein, when the fining element consists of fluorine, a concentration of fluorine in the buried layer is about 1 at % to about 20 at %.
An image sensor, comprising:
- a semiconductor substrate;
- and
- a pixel isolation film in a pixel trench passing through the semiconductor substrate and defining active pixels in the semiconductor substrate,
- wherein the pixel isolation film includes:
- an insulating liner on a sidewall of the pixel trench;
- and
- a buried layer filled in an inside of the pixel trench on the insulating liner, the buried layer including polysilicon containing a fining element at a first concentration,
- wherein the fining element consists of oxygen,
- wherein the insulating liner continuously extends from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate, and the second surface is opposite to the first surface, and
- wherein the first concentration is 6 at % to 40 at %.
An image sensor, comprising:
- a semiconductor substrate including a plurality of active pixels;
- and
- a pixel isolation film between active pixels of the plurality of active pixels and in a pixel trench passing through the semiconductor substrate,
- wherein the pixel isolation film includes:
- an insulating liner on a sidewall of the pixel trench;
- and
- a buried conductive layer filled in an inside of the pixel trench on the insulating liner, the buried conductive layer including polysilicon containing a fining element at a first concentration, and
- wherein the fining element consists of oxygen and the first concentration is 6 at % to 40 at %.
Dependencies are inferred from the claim text.