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US 11,239,263 B2Granted
Thin film transistor, method for manufacturing thereof and display device
AssigneeBoe Technology Group Co., Ltd.
InventorsTianmin Zhou, Wei Yang, Lizhong Wang, Xiaming Zhu, Jipeng Song
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Abstract
A thin film transistor, a method for manufacturing the same and a display device are disclosed. The thin film transistor includes source-drain electrodes and a passivation layer; an isolation layer is disposed between the source-drain electrodes and the passivation layer, and the isolation layer overlays the source-drain electrodes.
Claims19
A thin film transistor, comprising:
- source-drain electrodes and a passivation layer;
- wherein an isolation layer is disposed between the source-drain electrodes and the passivation layer, and the isolation layer overlays the source-drain electrodes,
- wherein the isolation layer and the passivation layer are sequentially laminated on the source-drain electrodes, and
- wherein the isolation layer is made from silicon oxide, the passivation layer is made from silicon oxide, and an oxygen content of the isolation layer is lower than an oxygen content of the passivation layer.
1 more element
A method for manufacturing a thin film transistor, comprising:
- forming a substrate which comprises source-drain electrodes;
- forming an isolation layer which overlays the source-drain electrodes;
- and
- forming a passivation layer on the isolation layer,
- wherein the isolation layer and the passivation layer are sequentially laminated on the source-drain electrodes, and
- wherein the isolation layer is made from silicon oxide, the passivation layer is made from silicon oxide, and an oxygen content of the isolation layer is lower than an oxygen content of the passivation layer.
3 more elements
A thin film transistor, comprising:
- source-drain electrodes and a passivation layer;
- wherein an isolation layer is disposed between the source-drain electrodes and the passivation layer, and the isolation layer overlays the source-drain electrodes,
- wherein an oxygen content of the isolation layer is lower than an oxygen content of the passivation layer.
Dependencies are inferred from the claim text.