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US 11,239,260 B2Granted
Substrate for electronic device, display apparatus, method of fabricating substrate for electronic device
AssigneesHefei Xinsheng Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsYang Zhang, Tongshang Su, Bin Zhou, Wei Li, Wei Song, Jun Liu
Life of this patent
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Abstract
A substrate for an electronic device includes an insulating layer; a via extending into the insulating layer; a light shielding layer in the via; and a thin film transistor comprising an active layer on the light shielding layer and in the via. The light shielding layer is configured to shield light from irradiating on the active layer.
Claims15
A substrate for an electronic device, comprising:
- an insulating layer;
- a via extending into the insulating layer;
- a light shielding layer in the via;
- and
- a thin film transistor comprising an active layer on the light shielding layer and in the via;
- wherein the light shielding layer is configured to shield light from irradiating on the active layer;
- wherein the thin film transistor further comprises a source electrode and a drain electrode respectively connected to the active layer;
- the source electrode comprises a first source electrode layer and a second source electrode layer;
- and
- the drain electrode comprises a first drain electrode layer and a second drain electrode layer;
- wherein the first source electrode layer and the first drain electrode layer are respectively on the insulating laver, each of which at least partially inside the via;
- the second source electrode layer is on a side of the first source electrode layer distal to the insulating layer;
- and
- the second drain electrode layer is on a side of the first drain electrode layer distal to the insulating layer;
- wherein the first source electrode layer, the first drain electrode layer, and the light shielding layer are in a same layer.
12 more elements
A method of fabricating a substrate for an electronic device, comprising:
- forming an insulating layer;
- forming a via extending into the insulating layer;
- forming a light shielding layer in the via;
- forming a thin film transistor;
- wherein forming the thin film transistor comprises forming an active layer on the light shielding layer and in the via;
- and
- wherein forming the thin film transistor further comprises forming a source electrode and a drain electrode respectively connected to the active layer;
- the source electrode comprises forming a first source electrode layer and a second source electrode layer;
- and
- the drain electrode comprises forming a first drain electrode layer and a second drain electrode layer;
- wherein the first source electrode layer and the first drain electrode layer are respectively formed on the insulating layer, each of which at least partially inside the via;
- the second source electrode layer is formed on a side of the first source electrode layer distal to the insulating layer;
- and
- the second drain electrode layer is formed on a side of the first drain electrode layer distal to the insulating layer;
- wherein the first source electrode layer, the first drain electrode layer, and the light shielding layer are formed in a same layer.
12 more elements
Dependencies are inferred from the claim text.