Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
AssigneeSanDisk Technologies LLC
InventorsAdarsh Rajashekhar, Raghuveer S. Makala, Fei Zhou
Life of this patent
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Abstract
A semiconductor structure includes a memory die bonded to a support die. The memory die includes an alternating stack of insulating layers and electrically conductive layers located over a first single crystalline semiconductor layer, and memory stack structures extending through the alternating stack and containing respective memory film and a respective vertical semiconductor channel including a single crystalline channel semiconductor material. The support die includes a peripheral circuitry.
Claims20
A method of forming a semiconductor structure, comprising:
- forming a source-level sacrificial layer on a first single crystalline semiconductor layer;
- forming an alternating stack of insulating layers and sacrificial material layers over the source-level sacrificial layer;
- forming memory openings through the alternating stack;
- forming in-process memory opening fill structures in the memory openings, wherein each of the in-process memory opening fill structures comprises a memory film and a sacrificial fill pillar;
- forming a source cavity by removing the source-level sacrificial layer selective to the alternating stack and the first single crystalline semiconductor layer;
- forming a single crystalline semiconductor source layer by selectively growing a doped semiconductor material in the source cavity;
- replacing the sacrificial material layers with electrically conductive layers;
- forming memory cavities by removing the sacrificial fill pillars selective to the memory films;
- and
- forming single crystalline vertical semiconductor channels by selectively growing a single crystalline semiconductor channel material in the memory cavities.
A method of forming a semiconductor structure, comprising:
- forming a silicon oxide layer over a top surface of a single crystalline semiconductor substrate;
- forming a hydrogen implanted layer within the single crystalline semiconductor substrate by implanting hydrogen atoms through the silicon oxide layer, wherein the single crystalline semiconductor substrate is divided into a proximal single crystalline semiconductor layer contacting the silicon oxide layer and a distal single crystalline semiconductor layer that is spaced from the silicon oxide layer by the proximal single crystalline semiconductor layer;
- attaching a handle substrate to the silicon oxide layer;
- detaching the distal single crystalline semiconductor layer from an assembly of the proximal single crystalline semiconductor layer, the silicon oxide layer, and the handle substrate by cleaving the single crystalline semiconductor substrate at the hydrogen implanted layer;
- forming semiconductor devices on a physically exposed horizontal surface of the proximal single crystalline semiconductor layer;
- and
- forming dielectric material layers embedding metal interconnect structures and bonding pads over the semiconductor devices.
A method of forming a semiconductor structure, comprising:
- forming an alternating stack of insulating layers and spacer material layers over a single crystalline semiconductor layer, wherein the sacrificial material layers are formed as, or are subsequently replaced with, electrically conductive layers;
- forming memory openings through the alternating stack;
- forming memory films in the memory openings;
- filling volumes of the memory openings that are not filled with the memory films with single crystalline semiconductor channel material portions having a doping of a first conductivity type and in epitaxial alignment with the single crystalline semiconductor layer;
- and
- bonding a support die containing peripheral circuitry to the memory die.
Dependencies are inferred from the claim text.