Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies

An integrated assembly comprising, along a cross-section:

• a conductive structure having a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface;
• a first insulative layer extending along one of the sidewall surfaces of the conductive structure, the first insulative layer extending along an entire length of the one sidewall surface of the conductive structure;
• and
• a void extending along the first insulative layer, the void capped with a material composition different from material composition of the first insulative layer.

An integrated assembly comprising, along a cross-section:

• a conductive structure having a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface;
• a device coupled to the top portion of the conductive structure;
• voids along the sidewall surfaces of the conductive structure;
• wherein the voids are capped by sealant material and the sealant material comprises silicon dioxide having a dielectric constant of less than about 3.5;
• wherein the silicon dioxide is doped with carbon;
• and
• wherein an amount of carbon within the carbon-doped silicon dioxide is within a range of from about 2 atomic percent to about 20 atomic percent.

An integrated assembly comprising, along a cross-section:

• a conductive structure having a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface;
• a first insulative layer extending along one of the sidewall surfaces of the conductive structure;
• a void extending along the first insulative layer;
• sealant material capping the void;
• a second insulative layer over the top surface of the conductive structure, and an entirety of the structure of the sealant material is below an uppermost surface of the second insulative layer;
• and
• wherein the sealant material comprises a lower dielectric constant than the second insulative material.

An integrated assembly comprising, along a cross-section:

• a conductive structure having a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface;
• a first insulative layer extending along one of the sidewall surfaces of the conductive structure and comprising a lowermost surface;
• a void extending along the first insulative layer and defined by a bottommost surface coplanar with the lowermost surface of the first insulative layer;
• sealant material capping the void;
• a second insulative layer over the top surface of the conductive structure;
• and
• wherein the sealant material is more porous than the second insulative material.