Semiconductor device

A semiconductor device having a transistor section, a current sense section and a diode section, the semiconductor device comprising:

• a gate metal layer provided above an upper surface of a semiconductor substrate;
• an emitter electrode provided above the upper surface of the semiconductor substrate;
• a first conductivity-type emitter region provided on the upper surface side of the semiconductor substrate in the transistor section;
• a gate trench section provided on the upper surface side of the semiconductor substrate in the transistor section, electrically connected to the gate metal layer and being in contact with the emitter region;
• an emitter trench section provided on the upper surface side of the semiconductor substrate in the diode section and electrically connected to the emitter electrode;
• and
• a dummy trench section provided on the upper surface side of the semiconductor substrate, the dummy trench section being electrically connected to the gate metal layerA and being not in contact with the emitter region;
• wherein each of the gate trench section, the emitter trench section and the dummy trench section is aligned in a preset alignment direction on the upper surface side of the semiconductor substrate, and
• a gate emitter ratio obtained by dividing a sum of a number of the gate trench section and a number of the dummy trench section included in a unit length in the alignment direction by a number of the emitter trench section is greater in the current sense section than in the transistor section.