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US 11,239,233 B2Granted
Integrated circuit packages and methods of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Wen Wu, Hung-Jui Kuo, Ming-Che Ho
Life of this patent
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Abstract
An integrated circuit package and a method of forming the same are provided. A method includes attaching a first side of an integrated circuit die to a carrier. An encapsulant is formed over and around the integrated circuit die. The encapsulant is patterned to form a first opening laterally spaced apart from the integrated circuit die and a second opening over the integrated circuit die. The first opening extends through the encapsulant. The second opening exposes a second side of the integrated circuit die. The first side of the integrated circuit die is opposite the second side of the integrated circuit die. A conductive material is simultaneously deposited in the first opening and the second opening.
Claims20
A method comprising:
- forming a first insulating layer over a carrier;
- forming a first redistribution layer (RDL) over the first insulating layer;
- forming a second insulating layer over the first insulating layer and the first RDL;
- forming a second RDL over the second insulating layer, a topmost surface of the second RDL being above a topmost surface of the second insulating layer, a portion of the second RDL extending through the second insulating layer and physically contacting the first RDL;
- attaching a first side of an integrated circuit die to the second insulating layer, a second side of the integrated circuit die having a connector, the first side of the integrated circuit die being opposite to the second side of the integrated circuit die;
- after attaching the first side of the integrated circuit die to the second insulating layer, forming a third insulating layer over and around the integrated circuit die, the third insulating layer being in physical contact with the topmost surface of the second RDL and the topmost surface of the second insulating layer;
- simultaneously forming a conductive via and a third RDL in the third insulating layer, a sidewall of the conductive via facing a sidewall of the integrated circuit die, a top surface of the conductive via being below a topmost surface of the third insulating layer, the third RDL being in physical contact with the connector, wherein simultaneously forming the conductive via and the third RDL in the third insulating layer comprises:
- patterning the third insulating layer to form a first recess and a second recess in the third insulating layer, the first recess extending through the third insulating layer and exposing the topmost surface of the second RDL, the second recess exposing a topmost surface of the connector;
- forming a patterned mask over the third insulating layer, the patterned mask exposing the first recess and the second recess;
- and
- simultaneously non-conformally depositing a conductive material in the first recess and the second recess through the patterned mask;
- and
- removing the carrier to expose the first insulating layer.
10 more elements
A method comprising:
- forming a first insulating layer over a carrier;
- forming a first redistribution layer (RDL) over the first insulating layer;
- forming second insulating layer over the first insulating layer and the first RDL;
- forming a second RDL over the second insulating layer, a first portion of the second RDL extending along a topmost surface of the second insulating layer, a second portion of the second RDL extending through the second insulating layer and physically contacting the first RDL;
- attaching a first side of an integrated circuit die to the topmost surface of the second insulating layer, the integrated circuit die having a second side opposite the first side;
- after attaching the first side of the integrated circuit die to the topmost surface of the second insulating layer, encapsulating the integrated circuit die in a third insulating layer, the third insulating layer being in physical contact with a sidewall and a topmost surface of the first portion of the second RDL;
- forming a first recess and a second recess in the third insulating layer, the first recess exposing the first portion of the second RDL, the second recess exposing the second side of the integrated circuit die;
- simultaneously depositing a first conductive material in the first recess and the second-recess;
- and
- removing the carrier from the first insulating layer.
7 more elements
A method comprising:
- depositing a first insulating layer over a carrier;
- forming a first redistribution layer (RDL) over the first insulating layer;
- depositing second insulating layer over the first insulating layer and the first RDL;
- forming a second RDL over the second insulating layer, a first portion of the second RDL being in physical contact with a topmost surface of the second insulating layer, a second portion of the second RDL extending through the second insulating layer and physically contacting the first RDL;
- attaching a first side of an integrated circuit die to the second insulating layer, a second side of the integrated circuit die having a connector, the second side of the integrated circuit die facing away from the second insulating layer;
- after attaching the first side of the integrated circuit die to the second insulating layer, depositing a third insulating layer over and in physical contact with the second insulating layer, the third insulating layer extending along a sidewall of the integrated circuit die and covering the connector;
- simultaneously forming a conductive via and a third RDL in the third insulating layer, the conductive via extending through the third insulating layer and physically contacting the first portion of the second RDL, a portion of the third RDL extending into the third insulating layer and physically contacting the connector, wherein simultaneously forming the conductive via and the third RDL comprises:
- patterning the third insulating layer to form a first recess and a second recess in the third insulating layer, the first recess exposing the first portion of the second RDL, the second recess exposing a topmost surface of the connector;
- depositing a first conductive material in the first recess and the second recess;
- forming a patterned mask over the first conductive material, the patterned mask exposing a first portion of the first conductive material in the first recess and a second portion of the first conductive material in the second recess;
- and
- simultaneously non-conformally depositing a second conductive material in the first recess and the second recess through the patterned mask, the second conductive material being different from the first conductive material;
- and
- detaching the carrier from the first insulating layer.
11 more elements
Dependencies are inferred from the claim text.