Semiconductor device

A semiconductor device, comprising:

• a semiconductor part;
• a first electrode provided on a back surface of the semiconductor part;
• a second electrode provided on a front surface of the semiconductor part;
• a control electrode provided between the second electrode and the semiconductor part inside a trench of the semiconductor part, the control electrode being electrically insulated from the semiconductor part by a first insulating portion inside the trench, the control electrode being electrically insulated from the second electrode by a second insulating portion between the control electrode and the second electrode;
• a third electrode provided inside the trench, the third electrode being provided more proximate to the first electrode than the control electrode, the third electrode being electrically insulated from the semiconductor part by a third insulating portion inside the trench, the third electrode being electrically insulated from the control electrode by a fourth insulating portion between the third electrode and the control electrode;
• a diode element provided at the front surface of the semiconductor part and electrically connected to the second electrode;
• a resistance element provided on an insulating film covering the front surface of the semiconductor part, the resistance element being connected in series to the diode element;
• a first interconnect electrically connecting the diode element and the resistance element, the first interconnect being electrically connected to the third electrode;
• and
• a second interconnect electrically connecting the resistance element and the semiconductor part,
• the semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity type,
• the first semiconductor layer being provided between the first electrode and the second electrode, between the first electrode and the diode element, and between the first electrode and the resistance element, the first semiconductor layer being electrically connected to the resistance element via the second interconnect,
• the second semiconductor layer being provided between the first semiconductor layer and the second electrode, the second semiconductor layer facing the control electrode via the first insulating portion,
• the third semiconductor layer being selectively provided between the second semiconductor layer and the second electrode, provided at a position contacting the first insulating portion, and electrically connected to the second electrode,
• the diode element being provided to have a rectifying property reverse to a current direction flowing from the resistance element to the second electrode.