Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorMasayuki Miura
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a substrate has a main surface. A first semiconductor chip has a first front surface and a first back surface, and is mounted on the main surface via a plurality of bump electrodes. A first spacer has a second front surface and a second back surface that is mounted on the main surface. A height of the second front surface from the main surface is within a range between a highest height and a lowest height of the first back surface from the main surface. A second spacer has a third front surface and a third back surface that is mounted on the main surface. A height of the third front surface from the main surface is within the range between the highest height and the lowest height of the first back surface from the main surface.
Claims11
A semiconductor device comprising:
- a substrate having a main surface;
- a first semiconductor chip having a first front surface and a first back surface, the first front surface being mounted on the main surface via a plurality of bump electrodes;
- a first spacer having a second front surface and a second back surface, the second back surface being mounted on the main surface, and a height of the second front surface from the main surface being within a range between a highest height and a lowest height of the first back surface from the main surface;
- a second spacer having a third front surface and a third back surface, the third back surface being mounted on the main surface, and a height of the third front surface from the main surface being within a range between the highest height and the lowest height of the first back surface from the main surface;
- a first adhesive film that covers the main surface wherein the first spacer is stacked on the first adhesive film;
- a second adhesive film that covers the main surface wherein the second spacer is stacked on the second adhesive film;
- a third adhesive film that covers at least the first back surface and the second front surface;
- and
- a second semiconductor chip that has a fourth front surface and a fourth back surface, the fourth back surface being adhered to the third adhesive film, wherein the second semiconductor chip is mounted on a plurality of electrode patterns disposed on the main surface via a plurality of bonding wires, wherein
- a thickness of the third adhesive film is equal to or larger than a thickness of the first adhesive film, and
- the thickness of the third adhesive film is equal to or larger than a thickness of the second adhesive film.
A semiconductor device comprising:
- a substrate having a main surface;
- a first semiconductor chip that having a first front surface and a first back surface, the first front surface being mounted on the main surface via a plurality of bump electrodes;
- a first spacer that has a second front surface and a second back surface, the second back surface being mounted on the main surface, and a height of the second front surface from the main surface being lower than a lowest height of the first back surface from the main surface;
- a second spacer that has a third front surface and a third back surface, the third back surface being mounted on the main surface, and a height of the third front surface from the main surface being lower than a lowest height of the first back surface from the main surface;
- an adhesive film that covers at least one of the first back surface, the second front surface, or the third front surface;
- and
- a second semiconductor chip that has a fourth front surface and a fourth back surface, the fourth back surface being adhered to the adhesive film, wherein the second semiconductor chip is mounted on a plurality of electrode patterns disposed on the main surface via a plurality of bonding wires.
Dependencies are inferred from the claim text.