Integrating passive devices in package structures

A package comprising:

• a first device die;
• a second device die over and directly bonded to the first device die;
• an isolation region encircling the second device die, wherein the isolation region extends along opposing sidewalls of the second device die;
• a first through-via and a second through-via penetrating through the isolation region to contact a first bond pad and a second bond pad, respectively, in the first device die, wherein an interface between the first through-via and the first bond pad is level with an interface between the first device die and the second device die;
• a first capacitor comprising:
• a first capacitor plate comprising a first portion in a first one of the first device die and the second device die;
• and
• a second capacitor plate in a the second one of the first device die and the second device die;
• and
• a second capacitor in the first device die, wherein the second capacitor comprises a top capacitor plate and a bottom capacitor plate connecting to the first through-via and the second through-via, respectively, wherein the top capacitor plate of the second capacitor contacts a bottom surface of the isolation region, and a top surface of the top capacitor plate is coplanar with the interface between the first device die and the second device die.

A package comprising:

• a first device die, wherein the first device die comprises:
• a first surface dielectric layer;
• and
• a first metal feature in the first surface dielectric layer;
• a second device die over the first device die, wherein the second device die comprises:
• a second surface dielectric layer bonded to the first surface dielectric layer;
• a first dielectric layer, wherein the second surface dielectric layer is interposed between the first dielectric layer and the first device die;
• and
• a second metal feature in the second surface dielectric layer, wherein the second metal feature is bonded to the first metal feature;
• and
• a passive device comprising:
• a first portion in the second device die, wherein the first metal feature and the second metal feature are in combination a second portion of the passive device, wherein the first dielectric layer extends between the first portion and the first device die.

A package comprising:

• a first device die comprising a first metal feature;
• and
• a second device die over and bonded to the first device die, wherein the second device die comprises:
• a second metal feature directly bonded to the first metal feature to jointly form a bottom capacitor plate of a capacitor;
• a dielectric layer over the second metal feature, wherein the dielectric layer comprises a portion acting as a capacitor insulator of the capacitor;
• a top capacitor plate;
• a semiconductor substrate over the top capacitor plate;
• and
• a first through-via and a second through-via penetrating through the semiconductor substrate, wherein the first through-via and the second through-via are electrically connected to the top capacitor plate and the bottom capacitor plate, respectively.