Integrated circuit package and method

A device comprising:

• a first dielectric layer;
• a first grounding feature on the first dielectric layer;
• a second grounding feature on the first dielectric layer;
• a third grounding feature on the first dielectric layer;
• a first pair of transmission lines on the first dielectric layer, the first pair of transmission lines being laterally disposed between the first grounding feature and the second grounding feature;
• a second pair of transmission lines on the first dielectric layer, second first pair of transmission lines being laterally disposed between the second grounding feature and the third grounding feature;
• a second dielectric layer on the first grounding feature, the second grounding feature, the third grounding feature, the first pair of transmission lines, and the second pair of transmission lines;
• and
• a fourth grounding feature on the second dielectric layer, the fourth grounding feature being physically and electrically coupled to the first grounding feature, the second grounding feature, and the third grounding feature.

A method comprising:

• depositing a first dielectric layer;
• plating a first metallization pattern on the first dielectric layer, the first metallization pattern comprising a first pair of transmission lines, a second pair of transmission lines, and a first grounding feature, the first grounding feature being laterally disposed between the first pair of transmission lines and the second pair of transmission lines, the first grounding feature having a first length, the first pair of transmission lines and the second pair of transmission lines extend continuously along the first length of the first grounding feature;
• depositing a second dielectric layer on the first metallization pattern and the first dielectric layer;
• patterning a first opening in the second dielectric layer, the first opening exposing the first grounding feature, the first pair of transmission lines and the second pair of transmission lines remaining covered by the second dielectric layer after the patterning;
• and
• plating a second metallization pattern having a second grounding feature on the second dielectric layer and a third grounding feature in the first opening.