Solder-metal-solder stack for electronic interconnect
AssigneeTexas Instruments Incorporated
InventorsRafael Jose Lizares Guevara, Maricel Fabia Escaño, Arvin Cedric Quiambao Mallari, Jovenic Romero Esquejo
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Abstract
An electronic device includes a substrate having top side contact pads including metal pillars thereon or a laminate substrate having land pads with the pillars thereon. A solder including layer stack is on the pillars, the solder including layer stack having a bottom solder material layer including in physical contact with a top surface of the pillars, a metal material layer, and a capping solder material layer on the metal material layer. The metal material layer is primarily a copper layer or an intermetallic compound (IMC) layer including copper.
Claims18
An electronic assembly, comprising:
- a semiconductor die comprising a semiconductor surface layer having circuitry configured for a function that includes at least one redistribution layer (RDL) and bump pads provided by the RDL, the bump pads including metal pillars thereon;
- a solder comprising layer stack on the pillars, the solder comprising layer stack comprising:
- a bottom solder material layer including in physical contact with a top surface of the pillars;
- a metal material layer on the bottom solder material layer, and
- a capping solder material layer on the metal material layer,
- wherein the metal material layer comprises primarily copper or an intermetallic compound (IMC) comprising layer including copper.
An electronic assembly, comprising:
- a laminate substrate having land pads with metal pillars thereon;
- a solder comprising layer stack on the pillars, the solder comprising layer stack comprising:
- a bottom solder material layer including in physical contact with a top surface of the pillars;
- a metal material layer on the bottom solder material layer, and
- a capping solder material layer on the metal material layer,
- wherein the metal material layer comprises primarily copper or an intermetallic compound (IMC) comprising layer including copper.
A method of fabricating an electronic assembly, comprising:
- forming a solder comprising layer stack on pillars on contact pads of a substrate having a semiconductor surface or on land pads of a laminate substrate, the solder comprising layer stack, including:
- dispensing a bottom solder material layer including in physical contact with a top side of the pillars;
- forming a metal material layer including copper on the bottom solder material layer, and
- dispensing a capping solder material layer on the metal material layer.
A method of fabricating an electronic assembly, comprising:
- forming a solder comprising layer stack on pillars on contact pads of a substrate having a semiconductor surface or on land pads of a laminate substrate, the solder comprising layer stack, including:
- dispensing a bottom solder material layer including in physical contact with a top side of the pillars;
- forming a metal material layer including copper on the bottom solder material layer, and
- dispensing a capping solder material layer on the metal material layer;
- wherein the substrate having the semiconductor surface comprises a wafer having a plurality of semiconductor die each comprising a semiconductor surface layer having circuitry configured for a function, and wherein the contact pads comprise bond pads or bump pads;
- singulating the wafer to provide a plurality of the semiconductor die;
- further comprising placing the semiconductor die on a leadframe having a die pad and leads or lead terminals at least two sides of the die pad, and
- reflowing to diffuse metal in the metal material layer to form an intermetallic compound (IMC) comprising layer in the bottom solder material layer and in the capping solder material layer.
Dependencies are inferred from the claim text.