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US 11,239,187 B2Granted
Semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorsTsutomu Kobori, Hiroshi Okabe, Shigeru Yoshida, Shingo Yanagihara, Yoshifumi Takahashi
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Abstract
A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.
Claims20
A semiconductor device comprising:
- a ground pad on a substrate;
- a plurality of transistors arranged in a first direction on a surface of the substrate, an emitter of each transistor being grounded;
- an input line on the substrate, the input line being connected to a base of each transistor;
- and
- at least two shunt inductors, each shunt inductor being connected at a first end to the input line and at a second end to the ground pad,
- wherein a first of the at least two shunt inductors is on a first side of a region of the substrate in which the plurality of transistors are arranged, with respect to the first direction, and
- wherein a second of the at least two shunt inductors is on a second side of the region of the substrate in which the plurality of transistors are arranged, with respect to the first direction, the second side being opposite the first side.
4 more elements
Dependencies are inferred from the claim text.