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US 11,239,164 B2Granted
Semiconductor device with metal plug having rounded top surface
AssigneeNanya Technology Corporation
InventorChun-Heng Wu
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Abstract
A semiconductor device includes a first metal plug and an etch stop layer disposed over a semiconductor substrate. The first metal plug has an upper portion protruding from a top surface of the etch stop layer, and a top surface of the upper portion is rounded. The semiconductor device also includes a second metal plug disposed over the first metal plug. The second metal plug is in direct contact with a first sidewall of the upper portion of the first metal plug and the top surface of the etch stop layer.
Claims13
A semiconductor device, comprising:
- a first metal plug and an etch stop layer disposed over a semiconductor substrate, wherein the first metal plug has an upper portion protruding from a top surface of the etch stop layer, and wherein the upper portion of the first metal plug includes a first sidewall, a second sidewall opposite to the first sidewall and a top surface between the first sidewall and the second sidewall, and the top surface of the upper portion is rounded;
- and
- a second metal plug disposed over the first metal plug, wherein the second metal plug is in direct contact with the first sidewall of the upper portion of the first metal plug and the top surface of the etch stop layer, wherein the second metal plug is not in contact with the second sidewall of the upper portion.
A semiconductor device, comprising:
- a first metal plug and a first dielectric layer disposed over a semiconductor substrate;
- an etch stop layer disposed over the first dielectric layer, wherein the first metal plug has an upper portion protruding from the etch stop layer, the upper portion of the first metal plug has a first sidewall, a second sidewall opposite to the first sidewall and a convex top surface between the first sidewall and the second sidewall, and the etch stop layer adjoins a lower portion of the first metal plug;
- a second dielectric layer disposed over the etch stop layer, wherein a topmost point of the convex top surface is higher than a top surface of the second dielectric layer;
- and
- a second metal plug disposed over the first metal plug, wherein the second metal plug extends to contact a top surface of the etch stop layer, wherein the second metal plug is in direct contact with the first side wall of the upper portion of the first metal plug and is not in contact with the second side wall of the upper portion of the first metal plug.
2 more elements
Dependencies are inferred from the claim text.