Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Haw Tsao, Tsung-Hsing Lu, Li-Huan Chu
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Abstract
A semiconductor structure includes a first substrate including a first surface and a second surface opposite to the first surface; a first conductive via extended through the first substrate; a second conductive via extended through the first substrate; and a third conductive via extended through the first substrate, wherein the second conductive via is disposed between the first conductive via and the third conductive via, the second conductive via is configured to connect to a signal source, and the first conductive via and the third conductive via are configured to connect to an electrical ground.
Claims20
A semiconductor structure, comprising:
- a first substrate including a first surface and a second surface opposite to the first surface;
- a polymeric layer extended over the first surface or the second surface of the first substrate;
- a conductive line extended within the polymeric layer;
- a first conductive via extended through the first substrate;
- a second conductive via extended through the first substrate;
- and
- a third conductive via extended through the first substrate,
- wherein the second conductive via is disposed between the first conductive via and the third conductive via, the second conductive via is configured to connect to a signal source, and the first conductive via and the third conductive via are configured to connect to an electrical ground.
A semiconductor structure, comprising:
- a first substrate including a first surface and a second surface opposite to the first surface;
- a plurality of first conductive vias extending through the first substrate, configured to connect to a signal source and spaced from each other by a first distance;
- and
- a plurality of second conductive vias extended through the first substrate to connect to an electrical ground, each of the plurality of second conductive vias is spaced from one of the plurality of first conductive vias by a second distance smaller than the first distance.
A semiconductor structure, comprising:
- a first substrate including a first surface and a second surface opposite to the first surface;
- a first conductive via including a first via and a second via;
- a second conductive via including a third via and a fourth via;
- and
- a third conductive via including a fifth via and a sixth via,
- wherein the first via is disposed over the second via, the third via is disposed over the fourth via, the fifth via is disposed over the sixth via, the first via, the third via and the fifth via are respectively extended through the first substrate, the second conductive via is disposed between the first conductive via and the third conductive via.
Dependencies are inferred from the claim text.