US 11,239,142 B2 · Package structure and method for forming the same

Abstract

A package structure and method for forming the same are provided. The package structure includes a conductive layer formed over a first substrate, and a dielectric layer formed over the conductive layer. The package structure includes a metal-insulator-metal (MIM) capacitor embedded in the dielectric layer, and a shielding layer formed over the MIM capacitor. The shielding layer is insulated from the MIM capacitor by the dielectric layer. The package structure also includes a first through via formed through the MIM capacitor, and the first through via is connected to the conductive layer, and the first through via is insulated from the shielding layer.

Claims20

Dependent claims

A package structure, comprising:

a gate structure formed over a first substrate;
a conductive layer formed over the gate structure;
a dielectric layer formed over the conductive layer;
a metal-insulator-metal (MIM) capacitor embedded in the dielectric layer;
a shielding layer formed over the MIM capacitor, wherein the shielding layer is insulated from the MIM capacitor by the dielectric layer;
and
a first through via formed through the MIM capacitor, wherein the first through via is connected to the conductive layer, and the first through via is insulated from the shielding layer, and a sidewall of the shielding layer extends beyond a sidewall of the gate structure, wherein the shielding layer is lower than a topmost surface of the first through via.

4 more elements

A package structure, comprising:

a first capacitor bottom metal (CBM) layer formed over a first substrate;
a first insulating layer formed over the first CBM layer;
a first capacitor top metal (CTM) layer formed over the first insulating layer, wherein a metal-insulator-metal (MIM) capacitor is constructed by the first CBM layer, the first insulating layer and the first CTM layer;
a conductive shielding layer formed over the first CTM layer, wherein the conductive shielding layer is insulated from the first CTM layer;
a first through via through the MIM capacitor, wherein the first through via is connected to the first CBM layer;
a second through via through the MIM capacitor, wherein the second through via is connected to the first CTM layer;
and
an underfill layer surrounding the MIM capacitor, wherein the underfill layer is in direct contact with the shielding layer.

5 more elements

A package structure, comprising:

a first capacitor bottom metal (CBM) layer formed over a first substrate;
a first insulating layer formed over the first CBM layer, wherein the first insulating layer comprises a first portion and a second portion, and the first portion is higher than the second portion;
a first capacitor top metal (CTM) layer formed over the first insulating layer, wherein a metal-insulator-metal (MIM) capacitor is constructed by the first CBM layer, the first insulating layer and the first CTM layer;
a first through via through the MIM capacitor, wherein the first through via is in direct contact with the first CBM layer and the first portion of the first insulating layer;
a second through via through the MIM capacitor, wherein the second through via is in direct contact with the first CTM layer and the second portion of the first insulating layer;
a shielding layer formed over the MIM capacitor, wherein the shielding layer is between the first through via and the second through via;
wherein the shielding layer has a plurality of discrete portions and one of the discrete portions of the shielding layer extends beyond the first through via;
and
a package layer surrounding the MIM capacitor and the shielding layer.

6 more elements

Dependencies are inferred from the claim text.

Package structure and method for forming the same

Life of this patent

Package structure and method for forming the same

Life of this patent

Abstract

Claims20