Package structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Wei Chen, Hao-Yi Tsai, Kuo-Lung Pan, Tin-Hao Kuo, Po-Yuan Teng, Chi-Hui Lai
Life of this patent
Estimating the term…
Abstract
A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.
Claims16
A package structure, comprising:
- a semiconductor die, having an active side and an opposite side opposite to the active side;
- a redistribution circuit structure, disposed on the active side and electrically coupled to the semiconductor die;
- a metallization element, having a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side;
- a lid, located over the metallization element, wherein the branch portion of the metallization element is located between the lid and the plate portion of the metallization element;
- and
- a thermal interface material, coated on an inner surface of the lid and located between the lid and the plate portion of the metallization element, wherein the thermal interface material is penetrated by the branch portion of the metallization element, and a thermal conductivity of the thermal interface material is different from a thermal conductivity of the lid and the metallization element.
A package structure, comprising:
- an insulating encapsulation;
- a semiconductor die, embedded in the insulating encapsulation, wherein a first side of the semiconductor die is free of the insulating encapsulation;
- a metal film having a plurality of vias distributed thereon, physically contacting the first side of the semiconductor die, wherein the metal film is sandwiched between the semiconductor die and the plurality of vias, and the plurality of the vias are thermally coupled to the semiconductor die through the metal film;
- a lid, located over the metal film, wherein the plurality of vias is located between the lid and the metal film;
- and
- a thermal interface material, coated on a flat surface of the lid and located between the lid and the metal film, wherein the thermal interface material is penetrated by the plurality of vias, and a thermal conductivity of the thermal interface material is different from a thermal conductivity of the lid.
Dependencies are inferred from the claim text.