Topside-cooled semiconductor package with molded standoff

A molded semiconductor package arrangement, comprising:

• a die pad configured to support a semiconductor;
• a first set of leads,
• wherein the first set of leads and the die pad are formed from a same piece of conductive material,
• wherein an electrical contact plane of the set of leads is offset from a bottom surface of the die pad;
• a second set of leads connected to a topside-cooling component,
• wherein a bottom plane of the second set of leads is coplanar to the bottom plane of the first set of leads within an electrical contact plane of the molded semiconductor package;
• and
• a mold structure that is formed to enclose the semiconductor and the die pad within the mold structure,
• wherein the mold structure includes a molded standoff that is beneath the die pad, and
• wherein a bottom surface of the molded standoff extends below the electrical contact plane of the first set of leads by a threshold distance that corresponds to a thickness of the molded standoff.

A method of manufacturing a molded semiconductor package, the method comprising:

• forming a first conductive portion of the molded semiconductor package,
• wherein the first conductive portion is formed to include a die pad and a first set of leads,
• wherein a bottom plane of the first set of leads is offset from a bottom surface of the die pad;
• forming a second conductive portion of the molded semiconductor package,
• wherein the second conductive portion is formed to include a topside-cooling component and a second set of leads connected to the topside-cooling component;
• forming a semiconductor assembly by placing a semiconductor of the molded semiconductor package between the die pad and the topside-cooling component,
• wherein the semiconductor assembly is formed so that the bottom plane of the first set of leads is coplanar to a bottom plane of the second set of leads to form an electrical contact plane of the molded semiconductor package;
• and
• forming a mold structure of the molded semiconductor package,
• wherein the mold structure is formed to enclose the die pad and the semiconductor within the mold structure,
• wherein the mold structure is formed to have a top surface of the mold structure that is coplanar to a top surface of the topside-cooling component, and
• wherein the mold structure is formed to have a molded standoff that has a bottom surface that is beneath the die pad and extends below the electrical contact plane.