Partial self-aligned contact for MOL

A method of forming a semiconductor device, the method comprising the steps of:

• patterning fins in a substrate;
• forming source and drains in the fins;
• forming at least one gate over the fins, separated from the source and drains by first spacers, wherein a lower portion of the at least one gate comprises a workfunction-setting metal, and wherein an upper portion of the at least one gate comprises an inner core metal between sidewall portions of an outer metal liner;
• recessing the outer metal liner to form divots in the upper portion of the at least one gate in between the first spacers and the inner core metal;
• forming second spacers in the divots such that the first spacers and the second spacers surround the inner core metal in the upper portion of the at least one gate;
• forming lower source and drain contacts in between the first spacers over the source and drains;
• recessing the lower source and drain contacts to form gaps over the lower source and drain contacts;
• forming source and drain caps in the gaps;
• depositing an MOL dielectric over the at least one gate and the source and drains;
• forming an upper source and drain contact in the MOL dielectric over a select one of the lower source and drain contacts;
• and
• forming a gate contact in the MOL dielectric over the at least one gate.