Array substrate and preparation method thereof
AssigneesBeijing Boe Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsWei Chen, Zhiqiang Zhang, Hanqing Liu, Yangheng Li, Mingming Jia, Xin Li, Yong Song
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Abstract
The present disclosure discloses an array substrate and a preparation method thereof. After a first passivation layer is formed, residual gas is directly drawn out of a closed chamber to prevent the residual gas from reacting to form an unstable layer on the first passivation layer. Furthermore, after the residual gas is drawn out, a preset gas fills the closed chamber, and is retained for a preset time period and then drawn out. The retaining of the preset gas can effectively alleviate the damage to the passivation layer by static electricity.
Claims8
A preparation method of an array substrate, comprising:
- providing a base substrate;
- forming a first passivation layer on the base substrate in a closed chamber filled with a first reaction gas, wherein the first reaction gas is a mixed gas containing silicon ions and nitrogen ions;
- drawing residual gas out of the closed chamber after the formation of the first passivation layer;
- and
- filling the closed chamber with a preset gas, retaining the preset gas in the closed chamber for a first preset time period and drawing out the preset gas to complete the preparation of the first passivation layer, wherein as compared with the residual gas, the preset gas exists more stably in the closed chamber;
- wherein before the formation of the first passivation layer, the method further comprises:
- sequentially forming a third passivation layer and a second passivation layer on the base substrate in the closed chamber, wherein a hardness of the first passivation layer, the second passivation layer and the third passivation layer increases in sequence.
Dependencies are inferred from the claim text.