Method of fabricating semiconductor device
AssigneeNanya Technology Corporation
InventorsChih-Wei Huang, Hsu-Cheng Fan, En-Jui Li
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes forming a first conductive structure over a substrate, successively forming a first spacer layer, a sacrificial layer, and a second spacer layer on the first conductive structure, forming a second conductive structure adjacent the first conductive structure and in contact with a lower portion of the second spacer layer, partially removing an upper portion of the second spacer layer to expose the sacrificial layer, removing the sacrificial layer through a vapor etch process to form an air gap between the lower portion of the second spacer layer and the first spacer layer, and forming a capping layer to cap the air gap.
Claims19
A method of fabricating a semiconductor device, comprising:
- forming a first conductive structure over a substrate;
- successively forming a first spacer layer, a sacrificial layer, and a second spacer layer on the first conductive structure;
- forming a second conductive structure adjacent the first conductive structure and in contact with a lower portion of the second spacer layer;
- partially removing an upper portion of the second spacer layer to expose the sacrificial layer;
- removing the sacrificial layer through a vapor etch process to form an air gap between the lower portion of the second spacer layer and the first spacer layer;
- and
- forming a capping layer to cap the air gap by forming a capping material on the first conductive structure and the second conductive structure to cap the air gap, and etching back the capping material to expose a top surface of the second conductive structure.
A method of fabricating a semiconductor device, comprising:
- forming a plurality of bit line structures over a substrate;
- forming a sacrificial layer on a surface of the bit line structures;
- forming a contact plug between the bit line structures;
- removing the sacrificial layer through a vapor etch process to form a plurality of air gaps between the bit line structures and the contact plug;
- and
- forming a capping layer to cap an entrance of each of the air gaps by forming a capping material on the plurality of bit line structures and the contact plug to cap the entrance of each of the air gaps, and etching back the capping material to expose a top surface of the contact plug.
Dependencies are inferred from the claim text.