Method for forming semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chen Wei, Chun-Chieh Chan, Chun-Jui Chu, Jen-Chieh Lai, Shih-Ho Lin
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer is made of a semiconductor material. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes removing the second layer. The method includes performing an etching process to remove the stop layer and an upper portion of the first layer. The method includes performing a first planarization process over the first layer.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a first layer over a substrate, wherein the first layer is made of a semiconductor material;
- forming a stop layer over the first layer;
- forming a second layer over the stop layer, wherein the second layer is in direct contact with the stop layer;
- partially removing the second layer;
- performing an etching process to partially remove the stop layer and an upper portion of the first layer;
- and
- performing a first planarization process of the first layer.
A method for forming a semiconductor device structure, comprising:
- providing a first layer;
- forming a second layer over the first layer, wherein the second layer is made of a semiconductor material;
- performing a first planarization process to remove an upper portion of the second layer;
- performing a first cleaning process;
- performing an etching process to partially remove an upper portion of the first layer;
- and
- performing a second planarization process of the first layer.
A method for forming a semiconductor device structure, comprising:
- forming a first layer over a substrate, wherein the substrate comprises a base portion and a fin portion over the base portion, and the first layer covers the fin portion and the base portion;
- forming a second layer over the first layer;
- performing a planarization process to remove a portion of the second layer;
- performing an etching process to remove an upper portion of the first layer, whereby protrusion structures are formed over a lower portion of the first layer by the etching process;
- and
- removing the protrusion structures.
Dependencies are inferred from the claim text.