Plasma processing method and plasma processing apparatus

Abstract

A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.

Dependencies are inferred from the claim text.