Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Han Lin, Chih-Ren Hsieh, Chih-Pin Huang, Ching-Wen Chan
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a first isolation feature in a peripheral region of a substrate; recessing the cell region of the substrate after forming the first isolation feature; forming a second isolation feature in a cell region of the substrate after recessing the cell region of the substrate; forming a plurality of control gates over the cell region of the substrate; and forming a gate stack over the peripheral region of the substrate.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- etching a first trench in a peripheral region of a substrate;
- filling the first trench with a first dielectric material to form a first isolation feature in the first trench;
- recessing a cell region of the substrate after filling the first trench with the first dielectric material;
- forming a second isolation feature in the cell region of the substrate after recessing the cell region of the substrate;
- forming a plurality of control gates over the cell region of the substrate;
- and
- forming a gate stack over the peripheral region of the substrate.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first isolation feature in a peripheral region of a substrate;
- depositing a floating gate film over the peripheral region and a cell region of the substrate after forming the first isolation feature, wherein a portion of the floating gate film is over a top surface of the first isolation feature;
- forming a trench in the floating gate film and the cell region of the substrate;
- forming a second isolation feature in the trench;
- forming a plurality of control gates over the floating gate film over the cell region of the substrate;
- and
- forming a gate stack over the peripheral region of the substrate.
A method for manufacturing a semiconductor device, the method comprising:
- etching a first trench in a peripheral region of a substrate;
- filling the first trench with a first dielectric material to form a first isolation feature in the first trench, wherein the first isolation feature surrounds a first active region in the peripheral region of the substrate;
- etching a second trench in a cell region of the substrate after filling the first trench with the first dielectric material;
- filling the second trench with a second dielectric material to form a second isolation feature in the second trench, wherein the second isolation feature surrounds a second active region in the cell region of the substrate;
- and
- forming a control gate over the second active region;
- and
- forming a gate stack over the first active region.
Dependencies are inferred from the claim text.