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AssigneeGlobalFoundries U.S. Inc.
InventorsHeng Yang, David C. Pritchard, George J. Kluth, Anurag Mittal, Hongru Ren, Manjunatha G. Prabhu, Kai Sun, Neha Nayyar, Lixia Lei
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The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.
A structure comprising a fully depleted semiconductor on insulator device having slots in an active region, wherein an active area ratio between the active region and slots within the active region is about 80%.
A structure comprising a fully depleted semiconductor on insulator device having slots in an active region, wherein an active area is a majority area with respect to the slots within the active region, wherein the slots are provided in a top layer of semiconductor material of the fully depleted semiconductor on insulator device, and the slots are between patterned spacer material on the top layer of the semiconductor material resulting in a multi-stripe active region.
Dependencies are inferred from the claim text.