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US 11,239,085 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYou-Hua Chou, Kuo-Sheng Chuang
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Abstract
A device includes a non-insulator structure, a first dielectric layer, and a first conductive feature. The first dielectric layer is over the non-insulator structure. The first conductive feature is in the first dielectric layer and includes carbon nano-tubes. The first catalyst layer is between the first conductive feature and the non-insulator structure. A top of the first catalyst layer is lower than a top of the first conductive feature.
Claims20
A device, comprising:
- a non-insulator structure;
- a first dielectric layer over the non-insulator structure;
- a first conductive feature in the first dielectric layer and comprising carbon nano-tubes;
- and
- a first catalyst layer between the first conductive feature and the non-insulator structure, wherein a top of the first catalyst layer is lower than a top of the first conductive feature.
2 more elements
A device, comprising:
- a non-insulator structure;
- a first dielectric layer over the non-insulator structure;
- a first conductive feature in the first dielectric layer and comprising carbon nano-tubes;
- a second dielectric layer over the first dielectric layer;
- a graphene-based conductive layer in the second dielectric layer;
- and
- a first catalyst layer under the graphene-based conductive layer, wherein a bottom of the first catalyst layer is above a top of the first conductive feature.
4 more elements
A method, comprising:
- depositing a first dielectric layer over a substrate;
- etching a trench in the first dielectric layer;
- and
- forming a graphene-based conductive layer in the trench, such that the graphene-based conductive layer has a first portion extending along a bottom of the trench and a second portion extending along sidewalls of the trench.
1 more element
Dependencies are inferred from the claim text.